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Novel Automated Strain Mapping Solution for TEM/STEM(Patent pending) based  on nanobeam precession diffraction patterrns  in combination with DigiSTAR. Precision up to 0.02% (200kV FEG) with spatial resolution  up to 2nm attainable (FEG-TEM)

High spatial resolution, high precision strain mapping in modern semiconductor devices

Acquisition of STEM reference image

Ultra-fast nanobeam precession electron diffraction scanned acquisition

Typical acquisition time: 5-10 min (150x150)

Time per pixel: 10-40 ms Analysis time 5-10 min

Automated local strain analysis via AppFive proprietary algorithm

Acquisition from individual positions, line profiles, areas

Spatial resolution < 2 nm attainable (FEG TEM)

Monitor engineered strain distributions in modern semiconductor devices

Expected sensitivity : < 2 x 10-4

Intuitive workflow

In combination with TOPSPIN simultaneous orientation/ phase/strain/STEM maps are possible

Strain maps from the Si regions of a pMOS device

• x and y-directions aligned with [220] and [002] directions in Si.

• Localized biaxial tensile strain close to contact edges.

Strain profile of an Si/SiGe layer

  1. Strain in x-direction is near zero, indicating a coherent interface.

Download Strain Mapping Application Notes